Samsung Unveils Next-Gen AI Memory Chips at NVIDIA GTC
Samsung Unveils Next-Gen AI Memory Chips at NVIDIA GTC
At the 2026 NVIDIA GTC event in San Jose, Samsung Electronics showcased its evolution from a memory manufacturer to a comprehensive "Total AI Solution" provider.
A major highlight was the unveiling of HBM4E, the industry’s first seventh-generation High-Bandwidth Memory.
Boasting 16Gbps per pin and 4TB/s bandwidth, it is set to power NVIDIA’s upcoming Vera Rubin Ultra platform.
Beyond memory, Samsung introduced Hybrid Copper Bonding, an innovative packaging technique that enhances thermal resistance by 20%, allowing for the stacking of 16 or more layers.
Jensen Huang, NVIDIA’s CEO, emphasized the strength of this partnership by autographing a Samsung HBM4 wafer.
Furthermore, Samsung is actively manufacturing the Groq 3 Language Processing Unit (LPU) as a key foundry partner.
Looking ahead, the company is already developing HBM5 and HBM5E to address critical AI data center bottlenecks like heat management and transmission speed.
By integrating memory, logic, foundry services, and advanced packaging, Samsung is positioning itself as a cornerstone of the next generation of artificial intelligence hardware.
